|
|
|
|
| LEADER |
00000pam a2200000 4500 |
| 001 |
29155 |
| 003 |
MY-KLNDU |
| 005 |
20241218082740.0 |
| 020 |
0 |
0 |
|a 9781420066876 (alk. paper)
|
| 020 |
0 |
0 |
|a 1420066870 (alk. paper)
|
| 035 |
|
|
|a 0000036174
|
| 039 |
|
9 |
|a 200911181404
|b VLOAD
|c 200911181221
|d VLOAD
|y 200910091816
|z VLOAD
|
| 090 |
0 |
0 |
|a TK7871.96 .B55
|b .F33 2008
|
| 245 |
0 |
0 |
|a Fabrication of SiGe HBT BiCM1 technology
|c edited by John D. Cressler
|
| 260 |
0 |
0 |
|a Boca Raton, FL
|b CRC Press
|c c2008
|
| 300 |
|
|
|a 1 v. (various pagings)
|b ill.
|c 27cm
|
| 504 |
0 |
0 |
|a Includes bibliographical references and index
|
| 591 |
|
|
|a 0000006834
|b 10/12/08
|c 0200-07
|d 1
|e RM243.02
|f 1
|g 243.02
|h INTRABAKTI SD.BHD.
|
| 592 |
|
|
|a IN04071
|b 29/04/09
|c RM213.97
|d 1
|e 213.97
|
| 650 |
0 |
0 |
|a Bipolar transistors
|x Design and construction
|
| 650 |
0 |
0 |
|a Metal oxide semiconductors, Complementary
|x Design and construction
|
| 700 |
1 |
1 |
|a Cressler
|h John D.
|
| 999 |
|
|
|a vtls000038900
|c 29155
|d 29155
|
