Measurement and modeling of silicon heterostructure devices

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Bibliographic Details
Other Authors: Cressler
Format: Book
Published: Boca Raton CRC Press c2008
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LEADER 00000pam a2200000 4500
001 29157
003 MY-KLNDU
005 20241218082741.0
020 0 0 |a 9781420066920(hbk) 
020 0 0 |a 1420066927(hbk) 
035 |a 0000036176 
039 9 |a 200911181404  |b VLOAD  |c 200911181221  |d VLOAD  |y 200910091816  |z VLOAD 
090 0 0 |a TK7871.96.B55  |b M33 2008 
245 0 0 |a Measurement and modeling of silicon heterostructure devices  |c edited by by John D. Cressler 
260 0 0 |a Boca Raton  |b CRC Press  |c c2008 
300 |a Various paging  |b ill.  |c 27cm 
504 0 0 |a Includes bibliographical references and index 
591 |a 0000006836  |b 10/12/08  |c 0200-07  |d 1  |e RM234.02  |f 1  |g 234.02  |h INTRABAKTI SD.BHD. 
592 |a IN04131  |b 28/03/09  |c RM217.25  |d 1  |e 217.25 
650 0 0 |a Bipolar transistors  |x Mathematical models 
650 0 0 |a Bipolar transistors 
650 0 0 |a Heterotructures 
650 0 0 |a Integrated circuits  |x Design and construction 
700 1 1 |a Cressler  |h John D. 
999 |a vtls000038905  |c 29157  |d 29157