APA (7th ed.) Citation

Cressler. (2008). SiGe and Si strained-layer epitaxy for silicon heterostructure devices. CRC Press/Taylor & Francis.

Chicago Style (17th ed.) Citation

Cressler. SiGe and Si Strained-layer Epitaxy for Silicon Heterostructure Devices. Boca Raton: CRC Press/Taylor & Francis, 2008.

MLA (9th ed.) Citation

Cressler. SiGe and Si Strained-layer Epitaxy for Silicon Heterostructure Devices. CRC Press/Taylor & Francis, 2008.

Warning: These citations may not always be 100% accurate.