SiGe and Si strained-layer epitaxy for silicon heterostructure devices
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| Format: | Book |
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Boca Raton
CRC Press/Taylor & Francis
c2008
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| 001 | 29158 | ||
| 003 | MY-KLNDU | ||
| 005 | 20241218082741.0 | ||
| 020 | 0 | 0 | |a 9781420066852 (alk. paper) |
| 020 | 0 | 0 | |a 1420066854 (alk. paper) |
| 035 | |a 0000036177 | ||
| 039 | 9 | |a 200911181404 |b VLOAD |c 200911181221 |d VLOAD |y 200910091816 |z VLOAD | |
| 090 | 0 | 0 | |a TK7871.96 .B55 |b S53 2008 |
| 245 | 0 | 0 | |a SiGe and Si strained-layer epitaxy for silicon heterostructure devices |c edited by John D. Cressler |
| 260 | 0 | 0 | |a Boca Raton |b CRC Press/Taylor & Francis |c c2008 |
| 300 | |a 1 v. (various pagings) |b ill. |c 26cm | ||
| 500 | 0 | 0 | |a "The materials was previously published in Silicon heterostructure handbook : materials, fabrication, devices, circuits and applications of SiGe and Si strained-layer epitaxy, Taylor & Francis. 2005"--T.p. verso |
| 504 | 0 | 0 | |a Includes bibliographical references and index |
| 591 | |a 0000006837 |b 10/12/08 |c 0200-07 |d 1 |e RM234.02 |f 1 |g 234.02 |h INTRABAKTI SD.BHD. | ||
| 592 | |a IN04071 |b 29/04/09 |c RM213.97 |d 1 |e 213.97 | ||
| 650 | 0 | 0 | |a Bipolar transistors |x Materials |
| 650 | 0 | 0 | |a Heterostructures |
| 650 | 0 | 0 | |a Silicon |x Electric properties |
| 650 | 0 | 0 | |a Epitaxy |
| 700 | 1 | 1 | |a Cressler |h John D. |
| 999 | |a vtls000038907 |c 29158 |d 29158 | ||