Nano-CMOS gate dielectric engineering
This book is a systematic review of high-K gate dielectric materials for CMOS chips (complementary metaloxide semiconductors), which are used in image sensors and data convertors (amplifiers, digital camera sensors, etc). Scaling CMOS devices down to the nanoscale creates new materials challenges, a...
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| Format: | Book |
| Language: | English |
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Boca Raton, FL
CRC Press
2012
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| 008 | 221104 20122012flua bi 001 0 eng d | ||
| 020 | |a 9781439849590 | ||
| 039 | 9 | |a 202211041137 |b VLOAD |c 201605060811 |d azraai |c 201604221618 |d faezah |y 201512081557 |z zubir | |
| 040 | |a UPNM |b eng |c UPNM |e rda | ||
| 090 | |a TK 7 871.99.M44 |b W66 2012 | ||
| 100 | 1 | |a Wong, Hei |e author | |
| 245 | 1 | 0 | |a Nano-CMOS gate dielectric engineering |c Hei Wong |
| 264 | 1 | |a Boca Raton, FL |b CRC Press |c 2012 | |
| 300 | |a xiv, 234 pages |b illustrations |c 24 cm | ||
| 336 | |a text |2 rdacontent | ||
| 337 | |a unmediated |2 rdamedia | ||
| 338 | |a volume |2 rdacarrier | ||
| 504 | |a Includes bibliographical references and index | ||
| 505 | 0 | |a 1. Overview of CMOS technology -- 2. High-k dielectrics -- 3. Complex forms of high-k oxides -- 4. Dielectric interfaces -- 5. Impacts on device operation -- 6. Fabrication issues -- 7. Conclusions | |
| 520 | |a This book is a systematic review of high-K gate dielectric materials for CMOS chips (complementary metaloxide semiconductors), which are used in image sensors and data convertors (amplifiers, digital camera sensors, etc). Scaling CMOS devices down to the nanoscale creates new materials challenges, and one effective response is to introduce novel materials such as High K dielectrics. The book presents the fundamental physics and properties of High-K materials and how they can be fabricated and used in Nano CMOS device - See more at: http://www.betterworldbooks.com/nano-cmos-gate-dielectric-engineering-id-1439849595.aspx&utm_source=Affiliate&utm_campaign=Text&utm_medium=booklink&utm_term=3630151&utm_content=Homepage#sthash.mhf9DArw.dpuf | ||
| 592 | |a IN/30916 |b 16/03/2016 |c RM 460.42 |h Bookline Services | ||
| 650 | 0 | |a Metal oxide semiconductors, Complementary |x Design and construction | |
| 650 | 0 | |a Dielectrics | |
| 650 | 0 | |a Gate array circuits | |
| 650 | 0 | |a Nanoelectronics |x Materials | |
| 999 | |a vtls000055738 |c 96936 |d 96936 | ||