Search Results - Terah*
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Suggested Topics within your search.
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Terahertz metrology
Published 2015Table of Contents: “…Terahertz time-domain spectrometers; Parameter extraction in time-domain spectrometers; Metrology for time-domain spectrometers; Evaluation of uncertainty in time-domain spectroscopy; Metrology for Fourier transform spectrometers; THz spectrometer calibration; THz imaging; Metrology for vector network analyzers; Terahertz optics; THz laser sources; Electronic sources of THz radiation and THz detectors…”
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Terahertz science and technology for military and security applications
Published 2007Subjects: “…Terahertz technology.…”
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THz identification for defense and security purposes identifying material, substances, and items
Published 2013Subjects: “…Terahertz technology…”
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Frontiers in electronics selected papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11), San Juan, Puerto-Rico, 18-21 December 2011
Published 2013Conference Proceeding Book -
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Microelectronics failure analysis desk reference
Published 2019Table of Contents: “…Orozco ; Fault isolation using time domain reflectometry, electro optical terahertz pulse reflectometry and time domain transmissometry / Hemachandar Tanukonda Devarajulu, Deepak Goyal, and Mayue Xie ; Frontside sample preparation / Jim Colvin ; Backside preparation and optics / Jim Colvin and Christopher Colvin ; Photon emission in silicon-based integrated circuits / Christian Boit, Anne Beyreuther, and Norbert Herfurth ; Physics of laser-based failure analysis / Felix Beaudoin and Edward Cole, Jr. ; Localizing defects with thermal detection techniques / Paiboon Tangyunyong and Christian Schmidt ; 3D hot-spot localization by lock-in thermography / Sebastian Brand and Frank Altmann ; LADA and SDL : powerful techniques for marginal failures / Dan Bodoh and Kent Erington ; Laser voltage probing of integrated circuits : implementation and impact / Keith A. …”
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Frontiers in electronics selected papers from the Workshop on Frontiers in Electronics 2011 (WOFE-11), San Juan, Puerto-Rico, 18-21 December 2011
Published 2013Conference Proceeding Book -
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Frontiers in electronics selected papers from the Workshop on Frontiers in Electronics 2013 (WOFE-13), San Juan, Puerto Rico, 17-20 December 2013
Published 2014Table of Contents: “…Progress in Magnetoresistive Memory: Magnetic Tunnel Junctions with a Composite Free Layer (Alexander Makarov, Viktor Sverdlov and Siegfried Selberherr)-- Development of III-Sb Technology for p-Channel MOSFETs (Andrew Greene, Shailesh Madisetti, Michael Yakimov, Vadim Tokranov and Serge Oktyabrsky)-- Graphene Active Plasmonics for New Types of Terahertz Lasers (Taiichi Otsuji, Akira Satou, Stephane Boubanga Tombet, Alexander A Dubinov, Vyacheslav V Popov, Victor Ryzhii and Michael S Shur-- Impact of Multi-Layer Carbon-Doped/Undoped GaN Buffer on Suppression of Current Collapse in AlGaN/GaN HFETs (Hee-Sung Kang, Dong-Seok Kim, Chul-Ho Won, Young-Jo Kim, Young Jun Yoon, Do-Kywn Kim, Jung-Hee Lee, YoungHo Bae and Sorin Cristoloveanu)-- Deep UV LEDs for Public Health Applications (Ignas Gaska, Olga Bilenko, Saulius Smetona, Yuri Bilenko, Remis Gaska and Michael Shur)-- Demonstration of Unified Memory in FinFETs (Sung-Jae Chang, Maryline Bawedin, Jong-Hyun Lee, Jung-Hee Lee and Sorin Cristoloveanu)-- Advances in MBE Selective Area Growth of III-Nitride Nanostructures: From NanoLEDs to Pseudo Substrates (Steven Albert, Ana Maria Bengoechea-Encabo, Francesca Barbagini, David Lopez-Rormero, Miguel Angel Sanchez-Garcia, Enrique Calleja, Pierre Lefebvre, Xiang Kong, Uwe Jahn, Achim Trampert, Marcus Muller, Frank Bertram, Gordon Schmidt, Peter Veit, Silke Petzold, Jurgen Christen, Philippe De Mierry and Jesus Zuniga-Perez)-- Structural and Optical Characteristics of Metamorphic Bulk InAsSb (Youxi Lin, Ding Wang, Dmitry Donetsky, Gela Kipshidze, Leon Shterengas, Gregory Belenky, Wendy L Sarney and Stefan P Svensson)-- Novel Cascade Diode Lasers Based on Type-I Quantum Wells (Rui Liang, Leon Shterengas, Gela Kipshidze, Takashi Hosoda, Sergey Suchalkin and Gregory Belenky)-- Vertical Conduction in the New Field Effect Transistors: p-Type and n-Type Vertical Channel Thin Film Transistors (Olivier Bonnaud, Peng Zhang, Emmanuel Jacques and Regis Rogel)-- Reflections on the Future Electric Power Grid Monitoring System (Michael Gouzman and Serge Luryi)…”
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